RY1267F — MICROCIRCUIT,MEMORY

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

RY1267F: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include body_width: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN, body_height: 0.225 INCHES MAXIMUM IN, body_length: 1.290 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY, inclosure_material: CERAMIC, memory_device_type: PROM. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-264-0458, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

RY1267F

NSN: 5962-01-264-0458
FSC: 5962 — Microcircuits, Electronic
CAGE: 07933 — FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ (USA)

SPECIFICATIONS

body_width	0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN
body_height	0.225 INCHES MAXIMUM IN
body_length	1.290 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY
inclosure_material	CERAMIC
memory_device_type	PROM
storage_temp_range	-65.0 TO 150.0 CELSIUS DEGC
test_data_document	96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
operating_temp_range	-55.0 TO 125.0 CELSIUS DEGC
inclosure_configuration	DUAL-IN-LINE
terminal_surface_treatment	SOLDER
time_rating_per_chacteristic	70.00 NANOSECONDS MAXIMUM DELAY NS
NSN	5962-01-264-0458

COMPONENT DIAGRAM

KEY FEATURES

•

INCLOSURE MATERIAL: CERAMIC

•

TERMINAL SURFACE TREATMENT: SOLDER

•

BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN

•

BODY HEIGHT: 0.225 INCHES MAXIMUM IN

•

FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY

•

INCLOSURE CONFIGURATION: DUAL-IN-LINE

•

MEMORY DEVICE TYPE: PROM

•

CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510

TYPICAL APPLICATIONS

Server memory expansion for virtualization workloads
Database performance optimization (in-memory computing)
VDI and remote desktop session hosting
High-performance computing (HPC) clusters
Mail server and collaboration platform scaling
Application server tier expansion

TECHNICAL CHARACTERISTICS

INCLOSURE MATERIAL	CERAMIC
TERMINAL SURFACE TREATMENT	SOLDER
BODY WIDTH	0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN
BODY HEIGHT	0.225 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION	DUAL-IN-LINE
MEMORY DEVICE TYPE	PROM
CASE OUTLINE SOURCE AND DESIGNATOR	D-3 MIL-M-38510
BODY LENGTH	1.290 INCHES MAXIMUM IN
STORAGE TEMP RANGE	-65.0 TO 150.0 CELSIUS DEGC

SUBSTITUTES & CROSS-REFERENCES 4

29683ADMBReference document

Same NSN cross-reference

Reference document — Secondary reference

2139739G001Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

29683ADM/883BReference document

Same NSN cross-reference

Reference document — Secondary reference

ROM/PROMReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandDemilitarization required — mutilation + specific procedure

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FREQUENTLY ASKED QUESTIONS

What is RY1267F?

RY1267F is a MICROCIRCUIT,MEMORY.

What parts can replace RY1267F?

There are 4 known substitutes for RY1267F: 29683ADMB, 2139739G001, 29683ADM/883B and 1 more. Substitute compatibility should be verified for your specific system.

What is the NSN for RY1267F?

RY1267F is cataloged in the U.S. Government catalog under NSN 5962-01-264-0458. This indicates validated use in U.S. government and defense supply chains.

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RY1267F — MICROCIRCUIT,MEMORY

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