RFK25P10 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

RFK25P10: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 0.820 INCHES NOMINAL IN, overall_height: 0.350 INCHES NOMINAL IN, overall_length: 1.563 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), features_provided: HERMETICALLY SEALED CASE, internal_configuration: FIELD EFFECT. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-295-3385, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

RFK25P10

NSN: 5961-01-295-3385
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 60991 — MICROCHIP TECHNOLOGY INC (USA)

SPECIFICATIONS

overall_width	0.820 INCHES NOMINAL IN
overall_height	0.350 INCHES NOMINAL IN
overall_length	1.563 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
features_provided	HERMETICALLY SEALED CASE
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	2 PIN AND 1 CASE
power_rating_per_characteristic	150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	25.00 AMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
voltage_rating_in_volts_per_characteristic	100.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
NSN	5961-01-295-3385

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS AMBIENT AIR DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AE

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.350 INCHES NOMINAL IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	100.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS AMBIENT AIR DEGC
MOUNTING FACILITY QUANTITY	2
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-204AE
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.563 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	FIELD EFFECT
OVERALL WIDTH	0.820 INCHES NOMINAL IN

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is RFK25P10?

RFK25P10 is a TRANSISTOR.

What is the NSN for RFK25P10?

RFK25P10 is cataloged in the U.S. Government catalog under NSN 5961-01-295-3385. This indicates validated use in U.S. government and defense supply chains.

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RFK25P10 — TRANSISTOR

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