The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.735 INCHES MAXIMUM IN, overall_height: 0.280 INCHES MAXIMUM IN, overall_length: 0.900 INCHES NOMINAL IN, transfer_ratio: 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR, mounting_method: PRESS FIT. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-01-212-8023, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC ENCLOSURE |
| overall_width | 0.735 INCHES MAXIMUM IN |
| overall_height | 0.280 INCHES MAXIMUM IN |
| overall_length | 0.900 INCHES NOMINAL IN |
| transfer_ratio | 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR |
| mounting_method | PRESS FIT |
| special_features | CERAMIC CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES; TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |
| features_provided | HERMETICALLY SEALED CASE |
| precious_material | GOLD |
| semiconductor_material | SILICON ALL TRANSISTOR |
| end_item_identification | SATELLITE COMMUNICATIONS SET,AN/WSC-3(V)9 |
| terminal_type_and_quantity | 8 RIBBON |
| NSN | 5961-01-212-8023 |
| TRANSFER RATIO | 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR |
| MATERIAL | CERAMIC ENCLOSURE |
| SPECIAL FEATURES | CERAMIC CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES; TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION DEGC |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 32.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR |
| POWER RATING PER CHARACTERISTIC | 270.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR |
| PRECIOUS MATERIAL AND LOCATION | LEADS GOLD |
| PRECIOUS MATERIAL | GOLD |