The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.340 INCHES MAXIMUM0.340 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), overall_diameter: 0.620 INCHES MAXIMUM0.620 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: PNPNJUNCTION PATTERN ARRANGEMENT: PNPN, features_provided: HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE, internal_configuration: JUNCTION CONTACTJUNCTION CONTACT. This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-078-8595, indicating validated use in U.S.
government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.340 INCHES MAXIMUM0.340 INCHES MAXIMUM IN |
| mounting_method | UNTHREADED HOLE(S) |
| overall_diameter | 0.620 INCHES MAXIMUM0.620 INCHES MAXIMUM IN |
| special_features | JUNCTION PATTERN ARRANGEMENT: PNPNJUNCTION PATTERN ARRANGEMENT: PNPN |
| features_provided | HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACTJUNCTION CONTACT |
| semiconductor_material | SILICONSILICON |
| mounting_facility_quantity | 22 |
| terminal_type_and_quantity | 2 PIN AND 2 PIN AND 1 CASE1 CASE |
| power_rating_per_characteristic | 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION |
| current_rating_per_characteristic | 60.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE60.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE |
| voltage_rating_in_volts_per_characteristic | 200.0 MAXIMUM BREAKOVER VOLTAGE, DC200.0 MAXIMUM BREAKOVER VOLTAGE, DC |
| NSN | 5961-00-078-8595 |
| CURRENT RATING PER CHARACTERISTIC | 60.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE60.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE |
| INTERNAL CONFIGURATION | JUNCTION CONTACTJUNCTION CONTACT |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODEANODE |
| SEMICONDUCTOR MATERIAL | SILICONSILICON |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPNJUNCTION PATTERN ARRANGEMENT: PNPN |
| OVERALL DIAMETER | 0.620 INCHES MAXIMUM0.620 INCHES MAXIMUM IN |
| OVERALL LENGTH | 0.340 INCHES MAXIMUM0.340 INCHES MAXIMUM IN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 CELSIUS JUNCTION100.0 CELSIUS JUNCTION DEGC |
| FEATURES PROVIDED | HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE |
| POWER RATING PER CHARACTERISTIC | 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION |