RA2A — SEMICONDUCTOR DEVICES,UNITIZED

✓ Government record, cited

— · MRO · MRO_GENERAL

PRODUCT OVERVIEW

RA2A: SEMICONDUCTOR DEVICES,UNITIZED.

The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_length: 0.259 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.750 INCHES MINIMUM IN, overall_diameter: 0.362 INCHES MAXIMUM IN, semiconductor_material: SILICON SINGLE SEMICONDUCTOR DEVICE DIODE, terminal_circle_diameter: 0.200 INCHES NOMINAL IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-710-9389, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

MRO→ MRO_GENERAL→ RA2A

NSN: 5961-00-710-9389
NIINs: 007109389, 013698131
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 03508 — GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT (USA)

SPECIFICATIONS

overall_length	0.259 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.750 INCHES MINIMUM IN
overall_diameter	0.362 INCHES MAXIMUM IN
semiconductor_material	SILICON SINGLE SEMICONDUCTOR DEVICE DIODE
terminal_circle_diameter	0.200 INCHES NOMINAL IN
terminal_type_and_quantity	4 UNINSULATED WIRE LEAD
component_name_and_quantity	1 SEMICONDUCTOR DEVICE DIODE AND 1 TRANSISTOR
power_rating_per_characteristic	250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE SEMICONDUCTOR DEVICE DIODE
current_rating_per_characteristic	10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC SINGLE TRANSISTOR
voltage_rating_in_volts_per_characteristic	45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN SINGLE TRANSISTOR
maximum_operating_temp_per_measurement_point	150.0 CELSIUS JUNCTION DEGC
NSN	5961-00-710-9389

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN SINGLE TRANSISTOR

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.362 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.750 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON SINGLE TRANSISTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN SINGLE TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.362 INCHES MAXIMUM IN
TERMINAL LENGTH	0.750 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON SINGLE TRANSISTOR
SEMICONDUCTOR MATERIAL	SILICON SINGLE SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH	0.259 INCHES MAXIMUM IN
COMPONENT NAME AND QUANTITY	1 SEMICONDUCTOR DEVICE DIODE AND 1 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC	10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC SINGLE TRANSISTOR

SUBSTITUTES & CROSS-REFERENCES 1

CD/RA2AReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — no further procurement; issued until stock is exhaustedNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is RA2A?

RA2A is a SEMICONDUCTOR DEVICES,UNITIZED. It is classified as a MRO (MRO_GENERAL).

What parts can replace RA2A?

There is 1 known substitute for RA2A: CD/RA2A. Substitute compatibility should be verified for your specific system.

What is the NSN for RA2A?

RA2A is cataloged in the U.S. Government catalog under NSN 5961-00-710-9389. This indicates validated use in U.S. government and defense supply chains.

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RA2A — SEMICONDUCTOR DEVICES,UNITIZED

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