R6220840EJ — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

R6220840EJ: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_length: 0.515 INCHES MINIMUM AND 0.565 INCHES MAXIMUM IN, mounting_method: COMPRESSION, overall_diameter: 1.600 INCHES MINIMUM AND 1.656 INCHES MAXIMUM IN, terminal_type_and_quantity: 2 CASE, current_rating_per_characteristic: 400.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-059-5970, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

R6220840EJ

NSN: 5961-01-059-5970
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 05277 — WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV (USA)

SPECIFICATIONS

material	CERAMIC ENCLOSURE
overall_length	0.515 INCHES MINIMUM AND 0.565 INCHES MAXIMUM IN
mounting_method	COMPRESSION
overall_diameter	1.600 INCHES MINIMUM AND 1.656 INCHES MAXIMUM IN
terminal_type_and_quantity	2 CASE
current_rating_per_characteristic	400.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
voltage_rating_in_volts_per_characteristic	800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
maximum_operating_temp_per_measurement_point	150.0 CELSIUS JUNCTION DEGC
NSN	5961-01-059-5970

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 1.600 INCHES MINIMUM AND 1.656 INCHES MAXIMUM IN

•

MOUNTING METHOD: COMPRESSION

•

CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE

•

MATERIAL: SILICON SEMICONDUCTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	1.600 INCHES MINIMUM AND 1.656 INCHES MAXIMUM IN
MOUNTING METHOD	COMPRESSION
OVERALL LENGTH	0.515 INCHES MINIMUM AND 0.565 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	400.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	CERAMIC ENCLOSURE
TERMINAL TYPE AND QUANTITY	2 CASE

SUBSTITUTES & CROSS-REFERENCES 5

143126011Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

A397NX18Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

543-126-011Reference document

Same NSN cross-reference

Reference document — Secondary reference

A397NReference document

Same NSN cross-reference

Reference document — Secondary reference

401PDL80S20Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusCancelled· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is R6220840EJ?

R6220840EJ is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace R6220840EJ?

There are 5 known substitutes for R6220840EJ: 143126011, A397NX18, 543-126-011 and 2 more. Substitute compatibility should be verified for your specific system.

What is the NSN for R6220840EJ?

R6220840EJ is cataloged in the U.S. Government catalog under NSN 5961-01-059-5970. This indicates validated use in U.S. government and defense supply chains.

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R6220840EJ — SEMICONDUCTOR DEVICE,DIODE

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