R6110830VQ: SEMICONDUCTOR DEVICE,DIODE.
The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include special_features: OP TEMP M65/P190 DEG C; MTG TORQUE 360 IN/LB; GENL PURPOSE RECTIFIER; 12600 VOLTS; RECOVERY TIME 13 USEC IN, current_rating_per_characteristic: 50.00 MILLIAMPERES NOMINAL REPETITIVE PEAK REVERSE CURRENT, voltage_rating_in_volts_per_characteristic: 1.4 NOMINAL FORWARD VOLTAGE, PEAK. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-450-7233, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| special_features | OP TEMP M65/P190 DEG C; MTG TORQUE 360 IN/LB; GENL PURPOSE RECTIFIER; 12600 VOLTS; RECOVERY TIME 13 USEC IN |
| current_rating_per_characteristic | 50.00 MILLIAMPERES NOMINAL REPETITIVE PEAK REVERSE CURRENT |
| voltage_rating_in_volts_per_characteristic | 1.4 NOMINAL FORWARD VOLTAGE, PEAK |
| NSN | 5961-01-450-7233 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1.4 NOMINAL FORWARD VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES NOMINAL REPETITIVE PEAK REVERSE CURRENT |
| SPECIAL FEATURES | OP TEMP M65/P190 DEG C; MTG TORQUE 360 IN/LB; GENL PURPOSE RECTIFIER; 12600 VOLTS; RECOVERY TIME 13 USEC IN |
No substitute or cross-reference records for this part.