R5000810XXZT: SEMICONDUCTOR DEVICE,DIODE.
The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, mounting_method: THREADED STUD(S), thread_series_designator: UNF, current_rating_per_characteristic: 100.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE, voltage_rating_in_volts_per_characteristic: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, maximum_operating_temp_per_measurement_point: 200.0 CELSIUS JUNCTION DEGC. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-164-8239, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC ENCLOSURE |
| mounting_method | THREADED STUD(S) |
| thread_series_designator | UNF |
| mounting_facility_quantity | 1 |
| current_rating_per_characteristic | 100.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE |
| voltage_rating_in_volts_per_characteristic | 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE |
| maximum_operating_temp_per_measurement_point | 200.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-164-8239 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 1 |
| MOUNTING METHOD | THREADED STUD(S) |
| CURRENT RATING PER CHARACTERISTIC | 100.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE |
| MATERIAL | CERAMIC ENCLOSURE |
| THREAD SERIES DESIGNATOR | UNF |
No substitute or cross-reference records for this part.