The SEMICONDUCTOR DEVICE SET is a the manufacturer industrial component. Key specifications include material: CERAMIC INCLOSURE ALL TRANSISTOR, overall_length: 0.725 INCHES NOMINAL ALL TRANSISTOR IN, mounting_method: UNTHREADED HOLE(S) ALL TRANSISTOR, semiconductor_material: SILICON ALL TRANSISTOR, mounting_facility_quantity: 2 ALL TRANSISTOR, terminal_type_and_quantity: 4 RIBBON ALL TRANSISTOR. This part is cataloged in the Federal Logistics Information System under NSN 5961-00-306-7232, indicating validated use in U.S.
government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC INCLOSURE ALL TRANSISTOR |
| overall_length | 0.725 INCHES NOMINAL ALL TRANSISTOR IN |
| mounting_method | UNTHREADED HOLE(S) ALL TRANSISTOR |
| semiconductor_material | SILICON ALL TRANSISTOR |
| mounting_facility_quantity | 2 ALL TRANSISTOR |
| terminal_type_and_quantity | 4 RIBBON ALL TRANSISTOR |
| component_name_and_quantity | 2 TRANSISTOR |
| component_function_relationship | MATCHED |
| power_rating_per_characteristic | 100.0 WATTS MINIMUM AVERAGE GATE POWER DISSIPATION ALL TRANSISTOR |
| current_rating_per_characteristic | 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR |
| voltage_rating_in_volts_per_characteristic | 70.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER ALL TRANSISTOR |
| maximum_operating_temp_per_measurement_point | 200.0 CELSIUS JUNCTION ALL TRANSISTOR DEGC |
| NSN | 5961-00-306-7232 |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION ALL TRANSISTOR DEGC |
| MATERIAL | CERAMIC INCLOSURE ALL TRANSISTOR |
| OVERALL LENGTH | 0.725 INCHES NOMINAL ALL TRANSISTOR IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 70.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER ALL TRANSISTOR |
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| MOUNTING FACILITY QUANTITY | 2 ALL TRANSISTOR |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON ALL TRANSISTOR |
| POWER RATING PER CHARACTERISTIC | 100.0 WATTS MINIMUM AVERAGE GATE POWER DISSIPATION ALL TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |