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Technical Data Sheet

PL 520D01003001/49 — MICROCIRCUIT,MEMORY

✓ Government record, cited
— · COMPONENT
PRODUCT OVERVIEW

PL 520D01003001/49: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include word_quantity: 4500, output_logic_form: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC, inclosure_material: CERAMIC, memory_device_type: FIRST-IN FIRST-OUT, operating_temp_range: -55.0 TO 125.0 CELSIUS DEGC, inclosure_configuration: DUAL-IN-LINE. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-434-4606, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
PL 520D01003001/49
NSN: 5962-01-434-4606
FSC: 5962 — Microcircuits, Electronic
CAGE: Z1F21 — BAE SYSTEMS AUSTRALIA LTD C/O DLM SECURE ROOM (AUS)
SPECIFICATIONS
word_quantity4500
output_logic_formCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
inclosure_materialCERAMIC
memory_device_typeFIRST-IN FIRST-OUT
operating_temp_range-55.0 TO 125.0 CELSIUS DEGC
inclosure_configurationDUAL-IN-LINE
terminal_type_and_quantity28 PIN
voltage_rating_and_type_per_characteristic5.0 VOLTS NOMINAL POWER SOURCE
NSN5962-01-434-4606
COMPONENT DIAGRAM
COMPONENT MAIN IC EDGE CONNECTOR No detailed specs available MICROCIRCUIT,MEMORY TITLE COMPONENT PN PL 520D01003001/49 MFR MICROCIRCUIT,MEMORY
KEY FEATURES
•
WORD QUANTITY: 4500
•
INCLOSURE MATERIAL: CERAMIC
•
INCLOSURE CONFIGURATION: DUAL-IN-LINE
•
MEMORY DEVICE TYPE: FIRST-IN FIRST-OUT
•
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
•
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
•
OPERATING TEMP RANGE: -55.0 TO 125.0 CELSIUS DEGC
•
TERMINAL TYPE AND QUANTITY: 28 PIN
TYPICAL APPLICATIONS
  • Server memory expansion for virtualization workloads
  • Database performance optimization (in-memory computing)
  • VDI and remote desktop session hosting
  • High-performance computing (HPC) clusters
  • Mail server and collaboration platform scaling
  • Application server tier expansion
TECHNICAL CHARACTERISTICS
WORD QUANTITY4500
INCLOSURE MATERIALCERAMIC
INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY DEVICE TYPEFIRST-IN FIRST-OUT
OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
VOLTAGE RATING AND TYPE PER CHARACTERISTIC5.0 VOLTS NOMINAL POWER SOURCE
OPERATING TEMP RANGE-55.0 TO 125.0 CELSIUS DEGC
TERMINAL TYPE AND QUANTITY28 PIN
OTHER ITEMS IN FSC 5962 — Microcircuits, Electronic
Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.
5962-00-001-1861 5962-00-001-1901 5962-00-001-1902 5962-00-001-1905 5962-00-001-1906 5962-00-001-1907 5962-00-001-1908 5962-00-001-1909
SUBSTITUTES & CROSS-REFERENCES 2
PL 520D01003001 ITEM 49Reference document
Same NSN cross-reference
Reference document — Secondary reference
IDT72131L50CBReference document
Same NSN cross-reference
Reference document — Design control — primary reference
LIFECYCLE
NSN statusActive· U.S. Government catalog
Demilitarization required — mutilation + specific procedure
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FREQUENTLY ASKED QUESTIONS
What is PL 520D01003001/49?
PL 520D01003001/49 is a MICROCIRCUIT,MEMORY.
What parts can replace PL 520D01003001/49?
There are 2 known substitutes for PL 520D01003001/49: PL 520D01003001 ITEM 49, IDT72131L50CB. Substitute compatibility should be verified for your specific system.
What is the NSN for PL 520D01003001/49?
PL 520D01003001/49 is cataloged in the U.S. Government catalog under NSN 5962-01-434-4606. This indicates validated use in U.S. government and defense supply chains.
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