P1182E — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

P1182E: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_length: 0.205 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.210 INCHES MAXIMUM IN, special_features: WEAPON SYSTEM ESSENTIAL. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-012-4940, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

P1182E

NSN: 5961-01-012-4940
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 15818 — TELCOM SEMICONDUCTOR INC (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_length	0.205 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES MINIMUM IN
overall_diameter	0.210 INCHES MAXIMUM IN
special_features	WEAPON SYSTEM ESSENTIAL
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
criticality_code_justification	FEAT
power_rating_per_characteristic	300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	10.00 MILLIAMPERES MAXIMUM GATE CURRENT
NSN	5961-01-012-4940

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -30.0 MAXIMUM GATE TO SOURCE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.210 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.500 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

CRITICALITY CODE JUSTIFICATION: FEAT

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	-30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -30.0 MAXIMUM GATE TO SOURCE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.210 INCHES MAXIMUM IN
TERMINAL LENGTH	0.500 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
CRITICALITY CODE JUSTIFICATION	FEAT
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.205 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	FIELD EFFECT
CURRENT RATING PER CHARACTERISTIC	10.00 MILLIAMPERES MAXIMUM GATE CURRENT

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 2

151-1066-00Reference document

Same NSN cross-reference

Reference document — Secondary reference

SF88025Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is P1182E?

P1182E is a TRANSISTOR.

What parts can replace P1182E?

There are 2 known substitutes for P1182E: 151-1066-00, SF88025. Substitute compatibility should be verified for your specific system.

What is the NSN for P1182E?

P1182E is cataloged in the U.S. Government catalog under NSN 5961-01-012-4940. This indicates validated use in U.S. government and defense supply chains.

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P1182E — TRANSISTOR

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