NTE56024 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

NTE56024: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 1.646 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.250 INCHES IN, semiconductor_material: SILICON, thread_series_designator: UNF. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-318-9709, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

NTE56024

NSN: 5961-01-318-9709
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 7T184 — NTE ELECTRONICS, INC (USA)

SPECIFICATIONS

overall_length	1.646 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	0.250 INCHES IN
semiconductor_material	SILICON
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	0.553 INCHES NOMINAL IN
terminal_type_and_quantity	2 TAB, SOLDER LUG AND 1 THREADED STUD
current_rating_per_characteristic	300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 40.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
voltage_rating_in_volts_per_characteristic	400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 2.5 MAXIMUM GATE TRIGGER VOLTAGE, DC
joint_electronic_device_engineering_council/jedec/case_outline_designation	TO-48
NSN	5961-01-318-9709

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 2.5 MAXIMUM GATE TRIGGER VOLTAGE, DC

•

MOUNTING FACILITY QUANTITY: 1

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-48

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

OVERALL WIDTH ACROSS FLATS: 0.553 INCHES NOMINAL IN

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 2.5 MAXIMUM GATE TRIGGER VOLTAGE, DC
MOUNTING FACILITY QUANTITY	1
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-48
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.646 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS	0.553 INCHES NOMINAL IN
NOMINAL THREAD SIZE	0.250 INCHES IN
CURRENT RATING PER CHARACTERISTIC	300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 40.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is NTE56024?

NTE56024 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What is the NSN for NTE56024?

NTE56024 is cataloged in the U.S. Government catalog under NSN 5961-01-318-9709. This indicates validated use in U.S. government and defense supply chains.

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NTE56024 — SEMICONDUCTOR DEVICE,THYRISTOR

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