NH632049 — SEMICONDUCTOR DEVICES,UNITIZED

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

NH632049: SEMICONDUCTOR DEVICES,UNITIZED.

The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.310 INCHES MAXIMUM IN, overall_height: 0.175 INCHES MAXIMUM IN, overall_length: 0.770 INCHES MAXIMUM IN, mounting_method: TERMINAL, special_features: HARDNESS CRITICAL PROCESS. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-470-6985, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

NH632049

NSN: 5961-01-470-6985
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 16236 — DLA LAND AND MARITIME DBA ENGINEERING AND TECHNICAL SUPPORT DIV DOCUMENT STANDARDIZATION DIVISION (VENDOR ITEM DRAWINGS) (USA)

SPECIFICATIONS

material	CERAMIC ENCLOSURE
overall_width	0.310 INCHES MAXIMUM IN
overall_height	0.175 INCHES MAXIMUM IN
overall_length	0.770 INCHES MAXIMUM IN
mounting_method	TERMINAL
special_features	HARDNESS CRITICAL PROCESS
semiconductor_material	SILICON ALL TRANSISTOR
end_item_identification	E/I FSCM AIRCRAFT,B-2 BOMBER (ATB)
terminal_type_and_quantity	14 PIN
component_name_and_quantity	4 TRANSISTOR
power_rating_per_characteristic	1.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
current_rating_per_characteristic	0.95 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
NSN	5961-01-470-6985

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR

•

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.175 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTOR
OVERALL LENGTH	0.770 INCHES MAXIMUM IN
COMPONENT NAME AND QUANTITY	4 TRANSISTOR
OVERALL WIDTH	0.310 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	0.95 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
SPECIAL FEATURES	HARDNESS CRITICAL PROCESS

SUBSTITUTES & CROSS-REFERENCES 2

IRFG110Reference document

Same NSN cross-reference

Reference document — Secondary reference

632049-03Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — no further procurement; issued until stock is exhaustedNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is NH632049?

NH632049 is a SEMICONDUCTOR DEVICES,UNITIZED.

What parts can replace NH632049?

There are 2 known substitutes for NH632049: IRFG110, 632049-03. Substitute compatibility should be verified for your specific system.

What is the NSN for NH632049?

NH632049 is cataloged in the U.S. Government catalog under NSN 5961-01-470-6985. This indicates validated use in U.S. government and defense supply chains.

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NH632049 — SEMICONDUCTOR DEVICES,UNITIZED

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