NH12325174 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

NH12325174: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 1.330 INCHES NOMINAL IN, mounting_method: THREADED STUD(S), special_features: HARNESS CRITICAL ITEM, nominal_thread_size: 0.250 INCHES IN, internal_configuration: FIELD EFFECT, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-282-8320, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

NH12325174

NSN: 5961-01-282-8320
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 16236 — DLA LAND AND MARITIME DBA ENGINEERING AND TECHNICAL SUPPORT DIV DOCUMENT STANDARDIZATION DIVISION (VENDOR ITEM DRAWINGS) (USA)

SPECIFICATIONS

overall_length	1.330 INCHES NOMINAL IN
mounting_method	THREADED STUD(S)
special_features	HARNESS CRITICAL ITEM
nominal_thread_size	0.250 INCHES IN
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	0.570 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN
terminal_type_and_quantity	3 TAB, SOLDER LUG
criticality_code_justification	FEAT
power_rating_per_characteristic	125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
NSN	5961-01-282-8320

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -20.0 MAXIMUM GATE TO SOURCE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-61 ISOLATED

•

MOUNTING METHOD: THREADED STUD(S)

•

CRITICALITY CODE JUSTIFICATION: FEAT

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	-100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -20.0 MAXIMUM GATE TO SOURCE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-61 ISOLATED
MOUNTING METHOD	THREADED STUD(S)
CRITICALITY CODE JUSTIFICATION	FEAT
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.330 INCHES NOMINAL IN
INTERNAL CONFIGURATION	FIELD EFFECT
OVERALL WIDTH ACROSS FLATS	0.570 INCHES MINIMUM AND 0.610 INCHES MAXIMUM IN

SUBSTITUTES & CROSS-REFERENCES 4

12325174Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

94-1277Reference document

Same NSN cross-reference

Reference document — Secondary reference

SFF174Reference document

Same NSN cross-reference

Reference document — Secondary reference

SNF1022Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)Demilitarization required — mutilation + specific procedure

Ready to buy NH12325174?

Compare prices from verified sellers on eBay

Buy on eBay →

As an eBay Partner, PartsTable may earn a commission. Your price is not affected.

FREQUENTLY ASKED QUESTIONS

What is NH12325174?

NH12325174 is a TRANSISTOR.

What parts can replace NH12325174?

There are 4 known substitutes for NH12325174: 12325174, 94-1277, SFF174 and 1 more. Substitute compatibility should be verified for your specific system.

What is the NSN for NH12325174?

NH12325174 is cataloged in the U.S. Government catalog under NSN 5961-01-282-8320. This indicates validated use in U.S. government and defense supply chains.

Community Feedback

NH12325174 — TRANSISTOR

Request a Quote — NH12325174