NDS0605: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include mounting_method: TERMINAL, special_features: VOLTAGE CONTROLLED P-CHANNEL SMALL SIGNAL SWITCH; HIGH DENSITY CELL DESIGN FOR LOW RDS(ON); HIGH SATURATION CURRENT, end_item_identification: 5895-01-630-0207 V/UHF AIU EXTENDED V, terminal_type_and_quantity: 3 BEAM LEAD, power_rating_per_characteristic: 0.36 WATTS MAXIMUM TOTAL POWER DISSIPATION, current_rating_per_characteristic: -0.18 AMPERES MINIMUM DRAIN CURRENT. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-702-7754, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| mounting_method | TERMINAL |
| special_features | VOLTAGE CONTROLLED P-CHANNEL SMALL SIGNAL SWITCH; HIGH DENSITY CELL DESIGN FOR LOW RDS(ON); HIGH SATURATION CURRENT |
| end_item_identification | 5895-01-630-0207 V/UHF AIU EXTENDED V |
| terminal_type_and_quantity | 3 BEAM LEAD |
| power_rating_per_characteristic | 0.36 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| current_rating_per_characteristic | -0.18 AMPERES MINIMUM DRAIN CURRENT |
| part_name_assigned_by_controlling_agency | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| voltage_rating_in_volts_per_characteristic | -60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -20.0 MINIMUM GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| maximum_operating_temp_per_measurement_point | 150.0 CELSIUS AMBIENT AIR DEGC |
| NSN | 5961-01-702-7754 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -20.0 MINIMUM GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS AMBIENT AIR DEGC |
| MOUNTING METHOD | TERMINAL |
| CURRENT RATING PER CHARACTERISTIC | -0.18 AMPERES MINIMUM DRAIN CURRENT |
| SPECIAL FEATURES | VOLTAGE CONTROLLED P-CHANNEL SMALL SIGNAL SWITCH; HIGH DENSITY CELL DESIGN FOR LOW RDS(ON); HIGH SATURATION CURRENT |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| END ITEM IDENTIFICATION | 5895-01-630-0207 V/UHF AIU EXTENDED V |
| TERMINAL TYPE AND QUANTITY | 3 BEAM LEAD |
| POWER RATING PER CHARACTERISTIC | 0.36 WATTS MAXIMUM TOTAL POWER DISSIPATION |
No substitute or cross-reference records for this part.