ND-4165 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

ND-4165: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.170 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, terminal_type_and_quantity: 2 UNINSULATED WIRE LEAD, power_rating_per_characteristic: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-145-9896, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

ND-4165

NSN: 5961-01-145-9896
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 50434 — AVAGO TECHNOLOGIES US INC DIV AVAGO TECHNOLOGIES (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.170 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.000 INCHES MINIMUM IN
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
power_rating_per_characteristic	250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
voltage_rating_in_volts_per_characteristic	100.0 MAXIMUM BREAKDOWN VOLTAGE, DC
maximum_operating_temp_per_measurement_point	150.0 CELSIUS JUNCTION DEGC
electrode_internally-electrically_connected_to_case	CATHODE
NSN	5961-01-145-9896

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

TERMINAL LENGTH: 1.000 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

MATERIAL: SILICON SEMICONDUCTOR

•

TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	100.0 MAXIMUM BREAKDOWN VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
TERMINAL LENGTH	1.000 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.170 INCHES MAXIMUM IN
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE	CATHODE
POWER RATING PER CHARACTERISTIC	250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 3

HPND-4165Reference document

Same NSN cross-reference

Reference document — Secondary reference

5800583-926200.712Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

3522 500 25553Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Demilitarization required — critical (Q)

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FREQUENTLY ASKED QUESTIONS

What is ND-4165?

ND-4165 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace ND-4165?

There are 3 known substitutes for ND-4165: HPND-4165, 5800583-926200.712, 3522 500 25553. Substitute compatibility should be verified for your specific system.

What is the NSN for ND-4165?

ND-4165 is cataloged in the U.S. Government catalog under NSN 5961-01-145-9896. This indicates validated use in U.S. government and defense supply chains.

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ND-4165 — SEMICONDUCTOR DEVICE,DIODE

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