The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM IN, overall_diameter: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-468-5260, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | SILICON SEMICONDUCTOR |
| overall_length | 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM IN |
| overall_diameter | 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN |
| features_provided | HERMETICALLY SEALED CASE |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD |
| function_for_which_designed | ZENER DIODE |
| specification/standard_data | 81349-MIL-PRF-19500/159 GOVERNMENT SPECIFICATION |
| voltage_tolerance_in_percent | -5.0 TO 5.0 |
| power_rating_per_characteristic | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| current_rating_per_characteristic | 70.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| NSN | 5961-00-468-5260 |