MZ0912B50Y: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 10.5 MILLIMETERS MAXIMUM MM, overall_height: 6.40 MILLIMETERS MAXIMUM MM, overall_length: 24.0 MILLIMETERS MAXIMUM MM, mounting_method: UNTHREADED HOLE(S), semiconductor_material: SILICON, function_for_which_designed: AMPLIFIER. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-628-3727, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_width | 10.5 MILLIMETERS MAXIMUM MM |
| overall_height | 6.40 MILLIMETERS MAXIMUM MM |
| overall_length | 24.0 MILLIMETERS MAXIMUM MM |
| mounting_method | UNTHREADED HOLE(S) |
| semiconductor_material | SILICON |
| function_for_which_designed | AMPLIFIER |
| internal_junction_configuration | NPN |
| part_name_assigned_by_controlling_agency | NPN MICROWAVE POWER TRANSISTOR |
| voltage_rating_in_volts_per_characteristic | 3.0 MAXIMUM COLLECTOR SUPPLY VOLTAGE |
| maximum_operating_temp_per_measurement_point | 200.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-628-3727 |
| OVERALL HEIGHT | 6.40 MILLIMETERS MAXIMUM MM |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.0 MAXIMUM COLLECTOR SUPPLY VOLTAGE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 24.0 MILLIMETERS MAXIMUM MM |
| OVERALL WIDTH | 10.5 MILLIMETERS MAXIMUM MM |
| FUNCTION FOR WHICH DESIGNED | AMPLIFIER |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | NPN MICROWAVE POWER TRANSISTOR |
No substitute or cross-reference records for this part.