MZ-76E4T0E: 860 Evo.
Designed for everyday computing, the Samsung 860 EVO is powered by our latest V-NAND technology and a robust algorithm-based Samsung controller to handle the workloads of mainstream PCs and laptops. Get fast, enduring performance with exceptional reliability and expanded compatibility. Samsung V-NAND Technology Samsung's V-NAND flash memory helps to overcome the limitations of conventional planar NAND architecture.
It stacks 64 cell layers vertically over one another rather than trying to fit itself onto a fixed horizontal space, in order to provide high density and performance with a small footprint. Fast Read/Write Performance The 860 EVO performs at sequential write speeds up to 520 MB/s and sequential read speeds up to 550 MB/s with a robust algorithm-based Samsung MJX controller (up to 1 GHz). Relentless Endurance With an industry warranty offering up to 2,400 Total Bytes Written (TBW) for 5 years, and our V-NAND flash's higher en This part is cataloged in the U.S.
Government catalog under NSN 7025-01-692-2712, indicating validated use in U.S. government and defense logistics supply chains.
| Part Number | MZ-76E4T0E |
| Manufacturer | Samsung |
| NSN | 7025-01-692-2712 |
| OVERALL HEIGHT | 0.27 INCHES NOMINAL IN |
| INTERFACE TYPE | SATA 3 |
| DESIGN TYPE | SOLID STATE |
| OVERALL LENGTH | 3.94 INCHES NOMINAL IN |
| DRIVE SIZE | 2.50 |
| OVERALL WIDTH | 2.76 INCHES NOMINAL IN |
| HEAD TYPE AND QUANTITY | 2 READ/WRITE |
| UNPACKAGED UNIT WEIGHT | 0.21 POUNDS LBS |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | 860 EVO 4TB TB |
| DATA STORAGE CAPACITY | 4.0 TERABYTES |