MTP1N100 — CAPACITOR,VARIABLE,CERAMIC DIELE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

MTP1N100: CAPACITOR,VARIABLE,CERAMIC DIELE.

CAPACITOR,VARIABLE,CERAMIC DIELE. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.420 INCHES MAXIMUM IN, overall_height: 0.190 INCHES MAXIMUM IN, overall_length: 0.625 INCHES MAXIMUM IN, mounting_method: TERMINAL, internal_configuration: FIELD EFFECT. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-316-1761, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

MTP1N100

NSN: 5961-01-316-1761
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 04713 — FREESCALE SEMICONDUCTOR, INC. (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_width	0.420 INCHES MAXIMUM IN
overall_height	0.190 INCHES MAXIMUM IN
overall_length	0.625 INCHES MAXIMUM IN
mounting_method	TERMINAL
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
terminal_type_and_quantity	3 PIN
power_rating_per_characteristic	75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	6.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
voltage_rating_in_volts_per_characteristic	1000.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 1000.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
maximum_operating_temp_per_measurement_point	150.0 CELSIUS JUNCTION DEGC
NSN	5961-01-316-1761

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 1000.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT

TYPICAL APPLICATIONS

RAID cache protection during power loss events
Write-back cache enablement for storage controllers
Enterprise server data integrity assurance
Hot-swap battery/capacitor replacement in production

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.190 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	1000.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 1000.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-220
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.625 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	FIELD EFFECT
OVERALL WIDTH	0.420 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	6.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK

SUBSTITUTES & CROSS-REFERENCES 3

IRFBG30Reference document

Same NSN cross-reference

Reference document — Secondary reference

LO4186Reference document

Same NSN cross-reference

Reference document — Secondary reference

130052Reference document

Same NSN cross-reference

Reference document — Design control — primary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — no further procurement; issued until stock is exhaustedNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is MTP1N100?

MTP1N100 is a CAPACITOR,VARIABLE,CERAMIC DIELE.

What parts can replace MTP1N100?

There are 3 known substitutes for MTP1N100: IRFBG30, LO4186, 130052. Substitute compatibility should be verified for your specific system.

What is the NSN for MTP1N100?

MTP1N100 is cataloged in the U.S. Government catalog under NSN 5961-01-316-1761. This indicates validated use in U.S. government and defense supply chains.

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MTP1N100 — CAPACITOR,VARIABLE,CERAMIC DIELE

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