MSP60: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 0.505 INCHES MAXIMUM IN, overall_height: 0.330 INCHES MAXIMUM IN, overall_length: 1.003 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), special_features: JUNCTION PATTERN ARRANGEMENT: NPN, precious_material: GOLD. This part is cataloged in the U.S.
Government catalog under NSN 5961-00-415-2016, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_width | 0.505 INCHES MAXIMUM IN |
| overall_height | 0.330 INCHES MAXIMUM IN |
| overall_length | 1.003 INCHES MAXIMUM IN |
| mounting_method | UNTHREADED HOLE(S) |
| special_features | JUNCTION PATTERN ARRANGEMENT: NPN |
| precious_material | GOLD |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 3 UNINSULATED WIRE LEAD AND 1 CASE |
| precious_material_and_location | TERMINAL SURFACES GOLD |
| power_rating_per_characteristic | 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| NSN | 5961-00-415-2016 |
| OVERALL HEIGHT | 0.330 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 600.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED RESISTANCE BETWEEN BASE AND EMITTER AND 5.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 2 |
| PRECIOUS MATERIAL | GOLD |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 1.003 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| OVERALL WIDTH | 0.505 INCHES MAXIMUM IN |