MSP-30: SEMICONDUCTOR DEVICE SET.
The SEMICONDUCTOR DEVICE SET is a the manufacturer industrial component. Key specifications include overall_width: 0.505 INCHES MAXIMUM ALL TRANSISTOR IN, overall_height: 0.330 INCHES MAXIMUM ALL TRANSISTOR IN, overall_length: 1.003 INCHES MAXIMUM ALL TRANSISTOR IN, mounting_method: UNTHREADED HOLE(S) ALL TRANSISTOR, precious_material: GOLD, internal_configuration: JUNCTION CONTACT ALL TRANSISTOR. This part is cataloged in the U.S.
Government catalog under NSN 5961-00-415-2017, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_width | 0.505 INCHES MAXIMUM ALL TRANSISTOR IN |
| overall_height | 0.330 INCHES MAXIMUM ALL TRANSISTOR IN |
| overall_length | 1.003 INCHES MAXIMUM ALL TRANSISTOR IN |
| mounting_method | UNTHREADED HOLE(S) ALL TRANSISTOR |
| precious_material | GOLD |
| internal_configuration | JUNCTION CONTACT ALL TRANSISTOR |
| semiconductor_material | SILICON ALL TRANSISTOR |
| mounting_facility_quantity | 2 ALL TRANSISTOR |
| terminal_type_and_quantity | 3 UNINSULATED WIRE LEAD AND 1 CASE ALL TRANSISTOR |
| component_name_and_quantity | 2 TRANSISTOR |
| precious_material_and_location | TERMINAL SURFACES GOLD |
| component_function_relationship | MATCHED |
| NSN | 5961-00-415-2017 |
| OVERALL HEIGHT | 0.330 INCHES MAXIMUM ALL TRANSISTOR IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 300.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 300.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED RESISTANCE BETWEEN BASE AND EMITTER AND 5.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION ALL TRANSISTOR DEGC |
| MOUNTING FACILITY QUANTITY | 2 ALL TRANSISTOR |
| PRECIOUS MATERIAL | GOLD |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| MOUNTING METHOD | UNTHREADED HOLE(S) ALL TRANSISTOR |
| INTERNAL JUNCTION CONFIGURATION | NPN ALL TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| OVERALL LENGTH | 1.003 INCHES MAXIMUM ALL TRANSISTOR IN |