MSC85470 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

MSC85470: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 0.504 INCHES MAXIMUM IN, overall_height: 0.308 INCHES MAXIMUM IN, overall_length: 0.308 INCHES MAXIMUM IN, mounting_method: PRESS FIT, special_features: JUNCTION PATTERN ARRANGEMENT: NPN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-309-8002, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

MSC85470

NSN: 5961-00-309-8002
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 57962 — STMICROELECTRONICS INC (USA)

SPECIFICATIONS

overall_width	0.504 INCHES MAXIMUM IN
overall_height	0.308 INCHES MAXIMUM IN
overall_length	0.308 INCHES MAXIMUM IN
mounting_method	PRESS FIT
special_features	JUNCTION PATTERN ARRANGEMENT: NPN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
terminal_type_and_quantity	2 FERRULE AND 1 TAB, SOLDER LUG
power_rating_per_characteristic	1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
current_rating_per_characteristic	200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
voltage_rating_in_volts_per_characteristic	55.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
NSN	5961-00-309-8002

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING METHOD: PRESS FIT

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.308 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	55.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING METHOD	PRESS FIT
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.308 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
OVERALL WIDTH	0.504 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC

SUBSTITUTES & CROSS-REFERENCES 4

007-00133-0000Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

007-0133-00Reference document

Same NSN cross-reference

Reference document — Secondary reference

2N5470Reference document

Same NSN cross-reference

Reference document — Secondary reference

RELEASE 6064Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is MSC85470?

MSC85470 is a TRANSISTOR.

What parts can replace MSC85470?

There are 4 known substitutes for MSC85470: 007-00133-0000, 007-0133-00, 2N5470 and 1 more. Substitute compatibility should be verified for your specific system.

What is the NSN for MSC85470?

MSC85470 is cataloged in the U.S. Government catalog under NSN 5961-00-309-8002. This indicates validated use in U.S. government and defense supply chains.

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MSC85470 — TRANSISTOR

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