MSC81035M — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

MSC81035M: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_length: 0.210 INCHES NOMINAL IN, mounting_method: UNTHREADED HOLE(S), semiconductor_material: SILICON, terminal_type_and_quantity: 2 TAB, SOLDER LUG, power_rating_per_characteristic: 29.0 WATTS MAXIMUM TOTAL POWER DISSIPATION. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-082-6228, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

MSC81035M

NSN: 5961-01-082-6228
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 0KLC8 — SGS-THOMSON MICROELECTRONICS INC (USA)

SPECIFICATIONS

material	CERAMIC ENCLOSURE
overall_length	0.210 INCHES NOMINAL IN
mounting_method	UNTHREADED HOLE(S)
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	2 TAB, SOLDER LUG
power_rating_per_characteristic	29.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
voltage_rating_in_volts_per_characteristic	55.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
maximum_operating_temp_per_measurement_point	200.0 CELSIUS JUNCTION DEGC
NSN	5961-01-082-6228

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC

•

MATERIAL: CERAMIC ENCLOSURE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	55.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.210 INCHES NOMINAL IN
CURRENT RATING PER CHARACTERISTIC	4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
MATERIAL	CERAMIC ENCLOSURE
TERMINAL TYPE AND QUANTITY	2 TAB, SOLDER LUG
POWER RATING PER CHARACTERISTIC	29.0 WATTS MAXIMUM TOTAL POWER DISSIPATION

SUBSTITUTES & CROSS-REFERENCES 6

1035MReference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

MSC1035MReference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

MS2553Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

72168Reference document

Same NSN cross-reference

Reference document — Secondary reference

403499-4Reference document

Same NSN cross-reference

Reference document — Secondary reference

T04MSC1035MJ0Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is MSC81035M?

MSC81035M is a TRANSISTOR.

What parts can replace MSC81035M?

There are 6 known substitutes for MSC81035M: 1035M, MSC1035M, MS2553 and 3 more. Substitute compatibility should be verified for your specific system.

What is the NSN for MSC81035M?

MSC81035M is cataloged in the U.S. Government catalog under NSN 5961-01-082-6228. This indicates validated use in U.S. government and defense supply chains.

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MSC81035M — TRANSISTOR

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