MS175JE: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.090 INCHES MINIMUM AND 0.110 INCHES MAXIMUM IN, overall_height: 0.045 INCHES MINIMUM AND 0.055 INCHES MAXIMUM IN, overall_length: 0.090 INCHES MINIMUM AND 0.110 INCHES MAXIMUM IN, mounting_method: TERMINAL, special_features: JUNCTION PATTERN ARRANGEMENT: NPN. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-174-6638, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC ENCLOSURE |
| overall_width | 0.090 INCHES MINIMUM AND 0.110 INCHES MAXIMUM IN |
| overall_height | 0.045 INCHES MINIMUM AND 0.055 INCHES MAXIMUM IN |
| overall_length | 0.090 INCHES MINIMUM AND 0.110 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| special_features | JUNCTION PATTERN ARRANGEMENT: NPN |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| end_item_identification | 1430-01-042-4907 |
| terminal_type_and_quantity | 4 RIBBON |
| power_rating_per_characteristic | 1.0 WATTS NOMINAL FORWARD POWER DISSIPATION, DC |
| NSN | 5961-01-174-6638 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 NOMINAL COLLECTOR TO BASE VOLTAGE, DC |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON |
| POWER RATING PER CHARACTERISTIC | 1.0 WATTS NOMINAL FORWARD POWER DISSIPATION, DC |
No substitute or cross-reference records for this part.