The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.130 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN, surface_finish: 16.0 MICROINCHES OUTSIDE DIAMETER, first_end_style: CHAMFERED, hardness_rating: 47.0 ROCKWELL C MINIMUM AND 58.0 ROCKWELL C MAXIMUM OVERALL, mounting_method: TERMINAL. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5315-00-959-2236, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | SILICON SEMICONDUCTOR |
| overall_length | 0.130 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN |
| surface_finish | 16.0 MICROINCHES OUTSIDE DIAMETER |
| first_end_style | CHAMFERED |
| hardness_rating | 47.0 ROCKWELL C MINIMUM AND 58.0 ROCKWELL C MAXIMUM OVERALL |
| mounting_method | TERMINAL |
| terminal_length | 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM IN |
| overall_diameter | 0.110 INCHES MINIMUM AND 0.180 INCHES MAXIMUM IN |
| second_end_style | RADIUS |
| special_features | RADIUS MAY BE CHAMFERED 25 DEG |
| features_provided | CASEHARDENED |
| pin_overall_length | 0.490 INCHES MINIMUM AND 0.510 INCHES MAXIMUM IN |
| NSN | 5315-00-959-2236 |
| SURFACE FINISH | 16.0 MICROINCHES OUTSIDE DIAMETER |
| FIRST END TAPER ANGLE | 47.0 DEGREES MINIMUM AND 58.0 DEGREES MAXIMUM |
| SPECIAL FEATURES | RADIUS MAY BE CHAMFERED 25 DEG |
| SECOND END STYLE | RADIUS |
| SECOND END CORNER RADIUS | 0.052 INCHES MAXIMUM IN |
| MATERIAL DOCUMENT AND CLASSIFICATION | ASTM A29 ASSN STD SINGLE MATERIAL RESPONSE OVERALL |
| MATERIAL | STEEL OVERALL |
| FIRST END STYLE | CHAMFERED |
| HARDNESS RATING | 47.0 ROCKWELL C MINIMUM AND 58.0 ROCKWELL C MAXIMUM OVERALL |
| PIN OVERALL DIAMETER | 0.1563 INCHES MINIMUM AND 0.1565 INCHES MAXIMUM IN |