MRA1014-2: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include special_features: BIPOLAR NPN UHF MICROWAVE TRANSISTOR; MIN POWER GAIN 8.2 DB; RF MOD PKG DB, internal_configuration: JUNCTION CONTACT, semiconductor_material: SILICON, current_rating_per_characteristic: 500.00 AMPERES NOMINAL COLLECTOR CURRENT, DC, voltage_rating_in_volts_per_characteristic: 50.0 MAXIMUM COLLECTOR-TO-EMITTER OFFSET VOLTAGE. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-562-7310, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| special_features | BIPOLAR NPN UHF MICROWAVE TRANSISTOR; MIN POWER GAIN 8.2 DB; RF MOD PKG DB |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| current_rating_per_characteristic | 500.00 AMPERES NOMINAL COLLECTOR CURRENT, DC |
| voltage_rating_in_volts_per_characteristic | 50.0 MAXIMUM COLLECTOR-TO-EMITTER OFFSET VOLTAGE |
| NSN | 5961-01-562-7310 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM COLLECTOR-TO-EMITTER OFFSET VOLTAGE |
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| CURRENT RATING PER CHARACTERISTIC | 500.00 AMPERES NOMINAL COLLECTOR CURRENT, DC |
| SPECIAL FEATURES | BIPOLAR NPN UHF MICROWAVE TRANSISTOR; MIN POWER GAIN 8.2 DB; RF MOD PKG DB |
No substitute or cross-reference records for this part.