The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_length: 0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.192 INCHES MINIMUM AND 0.222 INCHES MAXIMUM IN, internal_configuration: FIELD EFFECT. This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-164-9774, indicating validated use in U.S.
government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_length | 0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 0.500 INCHES MINIMUM IN |
| overall_diameter | 0.192 INCHES MINIMUM AND 0.222 INCHES MAXIMUM IN |
| internal_configuration | FIELD EFFECT |
| semiconductor_material | SILICON |
| terminal_type_and_quantity | 4 UNINSULATED WIRE LEAD |
| specification/standard_data | 80131-RELEASE5561 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| power_rating_per_characteristic | 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| current_rating_per_characteristic | 50.00 MILLIAMPERES MAXIMUM GATE CURRENT |
| maximum_operating_temp_per_measurement_point | 125.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-00-164-9774 |
| MATERIAL | PLASTIC ENCLOSURE |
| CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM GATE CURRENT |
| POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM IN |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL DIAMETER | 0.192 INCHES MINIMUM AND 0.222 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | FIELD EFFECT |