MP1X2087: SEMICONDUCTOR DEVICE,DIODE.
The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM IN, overall_length: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.080 INCHES NOMINAL IN, features_provided: ELECTROSTATIC SENSITIVE AND BURN IN. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-358-8991, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC ENCLOSURE |
| overall_width | 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM IN |
| overall_length | 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 0.080 INCHES NOMINAL IN |
| features_provided | ELECTROSTATIC SENSITIVE AND BURN IN |
| terminal_type_and_quantity | 2 RIBBON |
| function_for_which_designed | TUNNEL DIODE |
| current_rating_per_characteristic | 200.00 MICROAMPERES MINIMUM PEAK POINT CURRENT AND 300.00 MICROAMPERES MAXIMUM REVERSE CURRENT, AVERAGE |
| voltage_rating_in_volts_per_characteristic | 0.12 NOMINAL FORWARD VOLTAGE, DC |
| maximum_operating_temp_per_measurement_point | 115.0 CELSIUS AMBIENT AIR DEGC |
| NSN | 5961-01-358-8991 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 0.12 NOMINAL FORWARD VOLTAGE, DC |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 115.0 CELSIUS AMBIENT AIR DEGC |
| TERMINAL LENGTH | 0.080 INCHES NOMINAL IN |
| MOUNTING METHOD | TERMINAL |
| OVERALL LENGTH | 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM IN |
| OVERALL WIDTH | 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM IN |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND BURN IN |
| CURRENT RATING PER CHARACTERISTIC | 200.00 MICROAMPERES MINIMUM PEAK POINT CURRENT AND 300.00 MICROAMPERES MAXIMUM REVERSE CURRENT, AVERAGE |
| FUNCTION FOR WHICH DESIGNED | TUNNEL DIODE |
| MATERIAL | SILICON SEMICONDUCTOR |
No substitute or cross-reference records for this part.