MOD500C-2: SEMICONDUCTOR DEVICES,UNITIZED.
The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_width: 0.995 INCHES MINIMUM AND 1.005 INCHES MAXIMUM IN, overall_height: 0.250 INCHES MINIMUM AND 0.270 INCHES MAXIMUM IN, overall_length: 1.865 INCHES NOMINAL IN, mounting_method: UNTHREADED HOLE(S), features_provided: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE, semiconductor_material: SILICON ALL TRANSISTOR. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-376-2083, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_width | 0.995 INCHES MINIMUM AND 1.005 INCHES MAXIMUM IN |
| overall_height | 0.250 INCHES MINIMUM AND 0.270 INCHES MAXIMUM IN |
| overall_length | 1.865 INCHES NOMINAL IN |
| mounting_method | UNTHREADED HOLE(S) |
| features_provided | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE |
| semiconductor_material | SILICON ALL TRANSISTOR |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 12 UNINSULATED WIRE LEAD |
| component_name_and_quantity | 4 TRANSISTOR |
| power_rating_per_characteristic | 400.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| current_rating_per_characteristic | 26.00 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR |
| voltage_rating_in_volts_per_characteristic | 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 NOMINAL GATE TO SOURCE VOLTAGE ALL TRANSISTOR |
| NSN | 5961-01-376-2083 |
| OVERALL HEIGHT | 0.250 INCHES MINIMUM AND 0.270 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 NOMINAL GATE TO SOURCE VOLTAGE ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 2 |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| OVERALL LENGTH | 1.865 INCHES NOMINAL IN |
| COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
| OVERALL WIDTH | 0.995 INCHES MINIMUM AND 1.005 INCHES MAXIMUM IN |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE |