The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_width: 0.320 INCHES NOMINAL IN, overall_length: 0.213 INCHES NOMINAL IN, mounting_method: PRESS FIT, special_features: COMMON ANODE; ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN, semiconductor_material: SILICON ALL SEMICONDUCTOR DEVICE DIODE. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-504-0210, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | GLASS ENCLOSURE |
| overall_width | 0.320 INCHES NOMINAL IN |
| overall_length | 0.213 INCHES NOMINAL IN |
| mounting_method | PRESS FIT |
| special_features | COMMON ANODE; ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
| semiconductor_material | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| terminal_type_and_quantity | 3 RIBBON |
| component_name_and_quantity | 2 SEMICONDUCTOR DEVICE DIODE |
| power_rating_per_characteristic | 225.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
| current_rating_per_characteristic | 200.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT AND 500.00 MILLIAMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE |
| voltage_rating_in_volts_per_characteristic | 70.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE |
| maximum_operating_temp_per_measurement_point | 135.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-00-504-0210 |
| OVERALL WIDTH | 0.320 INCHES NOMINAL IN |
| OVERALL LENGTH | 0.213 INCHES NOMINAL IN |
| MOUNTING METHOD | PRESS FIT |
| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| SPECIAL FEATURES | COMMON ANODE; ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
| POWER RATING PER CHARACTERISTIC | 225.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT AND 500.00 MILLIAMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL TYPE AND QUANTITY | 3 RIBBON |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 70.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE |