MMBZ15VALT1 — SEMICONDUCTOR DEVICES,UNITIZED

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

MMBZ15VALT1: SEMICONDUCTOR DEVICES,UNITIZED.

The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.094 INCHES NOMINAL IN, overall_height: 0.039 INCHES NOMINAL IN, overall_length: 0.114 INCHES NOMINAL IN, mounting_method: TERMINAL, semiconductor_material: SILICON SECOND SEMICONDUCTOR DEVICE DIODE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-660-7375, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

MMBZ15VALT1

NSN: 5961-01-660-7375
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 1MQ07 — SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC DBA SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DIV CORPORATE HEADQUARTERS (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_width	0.094 INCHES NOMINAL IN
overall_height	0.039 INCHES NOMINAL IN
overall_length	0.114 INCHES NOMINAL IN
mounting_method	TERMINAL
semiconductor_material	SILICON SECOND SEMICONDUCTOR DEVICE DIODE
component_name_and_quantity	2 SEMICONDUCTOR DEVICE PHOTO
function_for_which_designed	TRANSIENT SUPPRESSOR AND ZENER DIODE
power_rating_per_characteristic	40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION FIRST SEMICONDUCTOR DEVICE DIODE
current_rating_per_characteristic	1.9 AMPERES MAXIMUM REVERSE CURRENT, PEAK SECOND SEMICONDUCTOR DEVICE DIODE
voltage_rating_in_volts_per_characteristic	12.0 NOMINAL REVERSE VOLTAGE, PEAK AND 15.0 NOMINAL BREAKDOWN VOLTAGE, DC SECOND SEMICONDUCTOR DEVICE DIODE
NSN	5961-01-660-7375

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 NOMINAL REVERSE VOLTAGE, PEAK AND 15.0 NOMINAL BREAKDOWN VOLTAGE, DC FIRST SEMICONDUCTOR DEVICE DIODE

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON FIRST SEMICONDUCTOR DEVICE DIODE

•

COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE PHOTO

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.039 INCHES NOMINAL IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	12.0 NOMINAL REVERSE VOLTAGE, PEAK AND 15.0 NOMINAL BREAKDOWN VOLTAGE, DC FIRST SEMICONDUCTOR DEVICE DIODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	12.0 NOMINAL REVERSE VOLTAGE, PEAK AND 15.0 NOMINAL BREAKDOWN VOLTAGE, DC SECOND SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON FIRST SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL	SILICON SECOND SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH	0.114 INCHES NOMINAL IN
COMPONENT NAME AND QUANTITY	2 SEMICONDUCTOR DEVICE PHOTO
OVERALL WIDTH	0.094 INCHES NOMINAL IN
CURRENT RATING PER CHARACTERISTIC	1.9 AMPERES MAXIMUM REVERSE CURRENT, PEAK FIRST SEMICONDUCTOR DEVICE DIODE

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is MMBZ15VALT1?

MMBZ15VALT1 is a SEMICONDUCTOR DEVICES,UNITIZED.

What is the NSN for MMBZ15VALT1?

MMBZ15VALT1 is cataloged in the U.S. Government catalog under NSN 5961-01-660-7375. This indicates validated use in U.S. government and defense supply chains.

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MMBZ15VALT1 — SEMICONDUCTOR DEVICES,UNITIZED

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