MMBT2484LT1G: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.051 INCHES NOMINAL IN, overall_height: 0.040 INCHES NOMINAL IN, overall_length: 0.114 INCHES NOMINAL IN, mounting_method: TERMINAL, special_features: LEAD-FREE. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-568-3040, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_width | 0.051 INCHES NOMINAL IN |
| overall_height | 0.040 INCHES NOMINAL IN |
| overall_length | 0.114 INCHES NOMINAL IN |
| mounting_method | TERMINAL |
| special_features | LEAD-FREE |
| internal_configuration | JUNCTION CONTACT-DOUBLE BASE |
| semiconductor_material | SILICON |
| terminal_type_and_quantity | 3 PIN |
| internal_junction_configuration | NPN |
| power_rating_per_characteristic | 225.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| current_rating_per_characteristic | 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| NSN | 5961-01-568-3040 |
| OVERALL HEIGHT | 0.040 INCHES NOMINAL IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION DEGC |
| MOUNTING METHOD | TERMINAL |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.114 INCHES NOMINAL IN |
| INTERNAL CONFIGURATION | JUNCTION CONTACT-DOUBLE BASE |
| OVERALL WIDTH | 0.051 INCHES NOMINAL IN |
| CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
No substitute or cross-reference records for this part.