MMBF4392: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_height: 0.050 INCHES MAXIMUM IN, overall_length: 0.115 INCHES NOMINAL IN, mounting_method: TERMINAL, overall_diameter: 0.104 INCHES MAXIMUM IN, internal_configuration: FIELD EFFECT. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-400-1664, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_height | 0.050 INCHES MAXIMUM IN |
| overall_length | 0.115 INCHES NOMINAL IN |
| mounting_method | TERMINAL |
| overall_diameter | 0.104 INCHES MAXIMUM IN |
| internal_configuration | FIELD EFFECT |
| semiconductor_material | SILICON |
| terminal_type_and_quantity | 3 PIN |
| current_rating_per_characteristic | 75.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT |
| voltage_rating_in_volts_per_characteristic | 30.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| joint_electronic_device_engineering_council/jedec/case_outline_designation | TO-236AA |
| NSN | 5961-01-400-1664 |
| OVERALL HEIGHT | 0.050 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-236AA |
| OVERALL DIAMETER | 0.104 INCHES MAXIMUM IN |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.115 INCHES NOMINAL IN |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| CURRENT RATING PER CHARACTERISTIC | 75.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT |
| MATERIAL | PLASTIC ENCLOSURE |