MMBD301LT1G: SEMICONDUCTOR DEVICE,DIODE.
The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.051 INCHES NOMINAL IN, overall_height: 0.040 INCHES NOMINAL IN, overall_length: 0.114 INCHES NOMINAL IN, mounting_method: TERMINAL, special_features: LEAD-FREE. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-568-3041, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_width | 0.051 INCHES NOMINAL IN |
| overall_height | 0.040 INCHES NOMINAL IN |
| overall_length | 0.114 INCHES NOMINAL IN |
| mounting_method | TERMINAL |
| special_features | LEAD-FREE |
| terminal_type_and_quantity | 3 PIN |
| power_rating_per_characteristic | 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| current_rating_per_characteristic | 200.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC |
| voltage_rating_in_volts_per_characteristic | 30.0 MAXIMUM REVERSE VOLTAGE, AVERAGE |
| maximum_operating_temp_per_measurement_point | 125.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-568-3041 |
| OVERALL HEIGHT | 0.040 INCHES NOMINAL IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM REVERSE VOLTAGE, AVERAGE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS JUNCTION DEGC |
| MOUNTING METHOD | TERMINAL |
| OVERALL LENGTH | 0.114 INCHES NOMINAL IN |
| OVERALL WIDTH | 0.051 INCHES NOMINAL IN |
| CURRENT RATING PER CHARACTERISTIC | 200.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC |
| SPECIAL FEATURES | LEAD-FREE |
| MATERIAL | SILICON SEMICONDUCTOR |
| MATERIAL | PLASTIC ENCLOSURE |
No substitute or cross-reference records for this part.