MJ11033G — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

MJ11033G: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 1.050 INCHES MAXIMUM IN, overall_height: 0.350 INCHES NOMINAL IN, overall_length: 1.573 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), terminal_length: 0.312 INCHES MINIMUM IN, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-237-3511, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

MJ11033G

NSN: 5961-01-237-3511
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 1MQ07 — SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC DBA SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DIV CORPORATE HEADQUARTERS (USA)

SPECIFICATIONS

overall_width	1.050 INCHES MAXIMUM IN
overall_height	0.350 INCHES NOMINAL IN
overall_length	1.573 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
terminal_length	0.312 INCHES MINIMUM IN
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	2 PIN AND 2 UNTHREADED HOLE
voltage_rating_in_volts_per_characteristic	120.0 NOMINAL COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 120.0 NOMINAL COLLECTOR TO BASE VOLTAGE, DC AND 5.0 NOMINAL EMITTER TO BASE VOLTAGE, DC
maximum_operating_temp_per_measurement_point	200.0 CELSIUS JUNCTION DEGC
joint_electronic_device_engineering_council/jedec/case_outline_designation	TO-3
NSN	5961-01-237-3511

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 NOMINAL COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 120.0 NOMINAL COLLECTOR TO BASE VOLTAGE, DC AND 5.0 NOMINAL EMITTER TO BASE VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3

•

TERMINAL LENGTH: 0.312 INCHES MINIMUM IN

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.350 INCHES NOMINAL IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	120.0 NOMINAL COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 120.0 NOMINAL COLLECTOR TO BASE VOLTAGE, DC AND 5.0 NOMINAL EMITTER TO BASE VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-3
TERMINAL LENGTH	0.312 INCHES MINIMUM IN
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.573 INCHES MAXIMUM IN
OVERALL WIDTH	1.050 INCHES MAXIMUM IN

SUBSTITUTES & CROSS-REFERENCES 1

MJ11033Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is MJ11033G?

MJ11033G is a TRANSISTOR.

What parts can replace MJ11033G?

There is 1 known substitute for MJ11033G: MJ11033. Substitute compatibility should be verified for your specific system.

What is the NSN for MJ11033G?

MJ11033G is cataloged in the U.S. Government catalog under NSN 5961-01-237-3511. This indicates validated use in U.S. government and defense supply chains.

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MJ11033G — TRANSISTOR

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