The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.320 INCHES MAXIMUM IN, overall_height: 0.200 INCHES MAXIMUM IN, overall_length: 0.785 INCHES MAXIMUM IN, transfer_ratio: 75.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR, mounting_method: TERMINAL. This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-309-7972, indicating validated use in U.S.
government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC ENCLOSURE |
| overall_width | 0.320 INCHES MAXIMUM IN |
| overall_height | 0.200 INCHES MAXIMUM IN |
| overall_length | 0.785 INCHES MAXIMUM IN |
| transfer_ratio | 75.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR |
| mounting_method | TERMINAL |
| terminal_length | 1.350 INCHES MAXIMUM IN |
| overall_diameter | 0.076 INCHES MAXIMUM IN |
| special_features | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |
| features_provided | HERMETICALLY SEALED CASE |
| semiconductor_material | SILICON ALL TRANSISTOR |
| terminal_circle_diameter | 0.200 INCHES NOMINAL IN |
| NSN | 5961-00-309-7972 |
| MOUNTING METHOD | TERMINAL |
| OVERALL DIAMETER | 0.076 INCHES MAXIMUM IN |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL IN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION DEGC |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| POWER RATING PER CHARACTERISTIC | 8.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| OVERALL LENGTH | 0.170 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC AND 0.4 MAXIMUM DRAIN SUPPLY VOLTAGE |
| TERMINAL LENGTH | 1.350 INCHES MAXIMUM IN |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |