MFE960 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

MFE960: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN, internal_configuration: FIELD EFFECT, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-183-5042, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

MFE960

NSN: 5961-01-183-5042
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 04713 — FREESCALE SEMICONDUCTOR, INC. (USA)

SPECIFICATIONS

overall_length	0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES MINIMUM IN
overall_diameter	0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
end_item_identification	AN/PRC-113V3
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
power_rating_per_characteristic	25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	3.00 AMPERES MAXIMUM DRAIN CURRENT
voltage_rating_in_volts_per_characteristic	60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE
maximum_operating_temp_per_measurement_point	150.0 CELSIUS AMBIENT AIR DEGC
NSN	5961-01-183-5042

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.500 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN
TERMINAL LENGTH	0.500 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	FIELD EFFECT
CURRENT RATING PER CHARACTERISTIC	3.00 AMPERES MAXIMUM DRAIN CURRENT
TEST DATA DOCUMENT	37695-617713 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — stock exhausted; no further procurementNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is MFE960?

MFE960 is a TRANSISTOR.

What is the NSN for MFE960?

MFE960 is cataloged in the U.S. Government catalog under NSN 5961-01-183-5042. This indicates validated use in U.S. government and defense supply chains.

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MFE960 — TRANSISTOR

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