MFE823 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

MFE823: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN, mounting_method: TERMINAL, overall_diameter: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN, internal_configuration: FIELD EFFECT, semiconductor_material: SILICON, terminal_type_and_quantity: 3 UNINSULATED WIRE LEAD. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-390-0168, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

MFE823

NSN: 5961-01-390-0168
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 17856 — SILICONIX INCORPORATED DIV SILICONIX (USA)

SPECIFICATIONS

overall_length	0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN
mounting_method	TERMINAL
overall_diameter	0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
power_rating_per_characteristic	375.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	-30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
voltage_rating_in_volts_per_characteristic	-25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 10.0 MAXIMUM GATE TO SOURCE VOLTAGE
maximum_operating_temp_per_measurement_point	150.0 CELSIUS JUNCTION DEGC
electrode_internally-electrically_connected_to_case	SOURCE
joint_electronic_device_engineering_council/jedec/case_outline_designation	TO-18
NSN	5961-01-390-0168

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 10.0 MAXIMUM GATE TO SOURCE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18

•

OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	-25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 10.0 MAXIMUM GATE TO SOURCE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-18
OVERALL DIAMETER	0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	FIELD EFFECT
CURRENT RATING PER CHARACTERISTIC	-30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
TERMINAL TYPE AND QUANTITY	3 UNINSULATED WIRE LEAD

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is MFE823?

MFE823 is a TRANSISTOR.

What is the NSN for MFE823?

MFE823 is cataloged in the U.S. Government catalog under NSN 5961-01-390-0168. This indicates validated use in U.S. government and defense supply chains.

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MFE823 — TRANSISTOR

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