MF200-EG2-N — LIGHT EMITTING DIODE

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

MF200-EG2-N: LIGHT EMITTING DIODE.

The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_length: 0.675 INCHES MAXIMUM IN, mounting_method: PRESS FIT, overall_diameter: 0.295 INCHES MAXIMUM IN, lens_transparency: TRANSLUCENT, luminous_intensity: 12.0 MILLICANDELA NOMINAL. This part is cataloged in the U.S.

Government catalog under NSN 5980-01-247-8418, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

MF200-EG2-N

NSN: 5980-01-247-8418
FSC: 5980 — Optoelectronic Devices and Associated Hardware
CAGE: 15513 — DISPLAY PRODUCTS INC. DBA DATA DISPLAY PRODUCTS (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_length	0.675 INCHES MAXIMUM IN
mounting_method	PRESS FIT
overall_diameter	0.295 INCHES MAXIMUM IN
lens_transparency	TRANSLUCENT
luminous_intensity	12.0 MILLICANDELA NOMINAL
internal_configuration	POINT CONTACT
semiconductor_material	GALLIUM PHOSPHIDE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
color_tone_produced_per_source	GREEN LENS
internal_junction_configuration	PN
power_rating_per_characteristic	120.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
NSN	5980-01-247-8418

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.8 MAXIMUM FORWARD VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.295 INCHES MAXIMUM IN

•

MOUNTING METHOD: PRESS FIT

•

INTERNAL JUNCTION CONFIGURATION: PN

•

SEMICONDUCTOR MATERIAL: GALLIUM PHOSPHIDE

•

LUMINOUS INTENSITY: 12.0 MILLICANDELA NOMINAL

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	2.8 MAXIMUM FORWARD VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	100.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.295 INCHES MAXIMUM IN
MOUNTING METHOD	PRESS FIT
INTERNAL JUNCTION CONFIGURATION	PN
SEMICONDUCTOR MATERIAL	GALLIUM PHOSPHIDE
LUMINOUS INTENSITY	12.0 MILLICANDELA NOMINAL
OVERALL LENGTH	0.675 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	POINT CONTACT
CURRENT RATING PER CHARACTERISTIC	40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC

SUBSTITUTES & CROSS-REFERENCES 6

SCD24501007Reference document

Same NSN cross-reference

Reference document — Secondary reference

MF200-EG2Reference document

Same NSN cross-reference

Reference document — Secondary reference

LO3596Reference document

Same NSN cross-reference

Reference document — Secondary reference

MF200-BG2Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

24501007GP4Reference document

Same NSN cross-reference

Reference document — Design control — primary reference

6220023Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is MF200-EG2-N?

MF200-EG2-N is a LIGHT EMITTING DIODE.

What parts can replace MF200-EG2-N?

There are 6 known substitutes for MF200-EG2-N: SCD24501007, MF200-EG2, LO3596 and 3 more. Substitute compatibility should be verified for your specific system.

What is the NSN for MF200-EG2-N?

MF200-EG2-N is cataloged in the U.S. Government catalog under NSN 5980-01-247-8418. This indicates validated use in U.S. government and defense supply chains.

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MF200-EG2-N — LIGHT EMITTING DIODE

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