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MEM851P — SEMICONDUCTOR DEVICES,UNITIZED

✓ Government record, cited
— · COMPONENT
PRODUCT OVERVIEW

MEM851P: SEMICONDUCTOR DEVICES,UNITIZED.

The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include body_width: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM IN, body_height: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM IN, body_length: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS, precious_material: GOLD, inclosure_material: CERAMIC AND METAL. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-040-8252, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
MEM851P
NSN: 5962-01-040-8252
FSC: 5962 — Microcircuits, Electronic
CAGE: 14936 — GENERAL SEMICONDUCTOR INC (USA)
SPECIFICATIONS
body_width0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM IN
body_height0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM IN
body_length0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN
features_providedHERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS
precious_materialGOLD
inclosure_materialCERAMIC AND METAL
storage_temp_range-65.0 TO 150.0 CELSIUS DEGC
operating_temp_range-55.0 TO 125.0 CELSIUS DEGC
input_circuit_pattern4 CHANNEL
end_item_identificationRECEIVER,RADIO TYPE R-1910(V)2/GRR
inclosure_configurationDUAL-IN-LINE
terminal_surface_treatmentGOLD
NSN5962-01-040-8252
COMPONENT DIAGRAM
COMPONENT MAIN IC EDGE CONNECTOR No detailed specs available SEMICONDUCTOR DEVICES,UNITIZED TITLE COMPONENT PN MEM851P MFR SEMICONDUCTOR DEVICES,
KEY FEATURES
•
INPUT CIRCUIT PATTERN: 4 CHANNEL
•
INCLOSURE MATERIAL: CERAMIC AND METAL
•
TERMINAL SURFACE TREATMENT: GOLD
•
PRECIOUS MATERIAL: GOLD
•
DESIGN FUNCTION AND QUANTITY: 4 SWITCH, FIELD EFFECT TRANSISTOR
•
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM IN
•
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM IN
•
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS
TECHNICAL CHARACTERISTICS
INPUT CIRCUIT PATTERN4 CHANNEL
INCLOSURE MATERIALCERAMIC AND METAL
TERMINAL SURFACE TREATMENTGOLD
PRECIOUS MATERIALGOLD
DESIGN FUNCTION AND QUANTITY4 SWITCH, FIELD EFFECT TRANSISTOR
BODY WIDTH0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM IN
BODY HEIGHT0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM IN
FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATIONDUAL-IN-LINE
CASE OUTLINE SOURCE AND DESIGNATORT0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
SUBSTITUTES & CROSS-REFERENCES 2
MEM851DReference document
Same NSN cross-reference
Reference document — Secondary reference
DMS 81100BReference document
Same NSN cross-reference
Reference document — Secondary reference
LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Terminal item — no further procurement; issued until stock is exhaustedDemilitarization required — critical (Q)
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FREQUENTLY ASKED QUESTIONS
What is MEM851P?
MEM851P is a SEMICONDUCTOR DEVICES,UNITIZED.
What parts can replace MEM851P?
There are 2 known substitutes for MEM851P: MEM851D, DMS 81100B. Substitute compatibility should be verified for your specific system.
What is the NSN for MEM851P?
MEM851P is cataloged in the U.S. Government catalog under NSN 5962-01-040-8252. This indicates validated use in U.S. government and defense supply chains.
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