ME43900200001 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

ME43900200001: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_length: 1.646 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), semiconductor_material: SILICON, overall_width_across_flats: 0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM IN, terminal_type_and_quantity: 2 TAB, SOLDER LUG AND 1 THREADED STUD. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-175-8750, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

ME43900200001

NSN: 5961-01-175-8750
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 18876 — US ARMY AVIATION AND MISSILE COMMAND (USA)

SPECIFICATIONS

material	CERAMIC ENCLOSURE
overall_length	1.646 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
semiconductor_material	SILICON
mounting_facility_quantity	1
overall_width_across_flats	0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM IN
terminal_type_and_quantity	2 TAB, SOLDER LUG AND 1 THREADED STUD
current_rating_per_characteristic	40.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS AND 175.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
voltage_rating_in_volts_per_characteristic	10.0 MAXIMUM GATE VOLTAGE, DC
maximum_operating_temp_per_measurement_point	125.0 CELSIUS CASE DEGC
electrode_internally-electrically_connected_to_case	ANODE
NSN	5961-01-175-8750

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM GATE VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS CASE DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM IN

•

CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS AND 175.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	10.0 MAXIMUM GATE VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS CASE DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.646 INCHES MAXIMUM IN
OVERALL WIDTH ACROSS FLATS	0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	40.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS AND 175.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
TEST DATA DOCUMENT	18876-ME43900200001 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)
MATERIAL	CERAMIC ENCLOSURE

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 1

C35FX227GReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is ME43900200001?

ME43900200001 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace ME43900200001?

There is 1 known substitute for ME43900200001: C35FX227G. Substitute compatibility should be verified for your specific system.

What is the NSN for ME43900200001?

ME43900200001 is cataloged in the U.S. Government catalog under NSN 5961-01-175-8750. This indicates validated use in U.S. government and defense supply chains.

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ME43900200001 — SEMICONDUCTOR DEVICE,THYRISTOR

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