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Technical Data Sheet

MD27C010-150V10/B — MICROCIRCUIT,MEMORY

✓ Government record, cited
— · COMPONENT
PRODUCT OVERVIEW

MD27C010-150V10/B: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include features_provided: ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND HIGH PERFORMANCE AND W/DISABLE AND W/ENABLE, output_logic_form: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC, inclosure_material: CERAMIC, memory_device_type: ROM, storage_temp_range: -65.0 TO 125.0 CELSIUS DEGC, test_data_document: 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-331-1070, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
MD27C010-150V10/B
NSN: 5962-01-331-1070
FSC: 5962 — Microcircuits, Electronic
CAGE: 34649 — INTEL CORP SALES OFFICE (USA)
SPECIFICATIONS
features_providedULTRAVIOLET ERASABLE AND PROGRAMMABLE AND HIGH PERFORMANCE AND W/DISABLE AND W/ENABLE
output_logic_formCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
inclosure_materialCERAMIC
memory_device_typeROM
storage_temp_range-65.0 TO 125.0 CELSIUS DEGC
test_data_document96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
operating_temp_range-55.0 TO 125.0 CELSIUS DEGC
input_circuit_pattern19 INPUT
inclosure_configurationDUAL-IN-LINE
terminal_surface_treatmentSOLDER
voltage_rating_and_type_per_characteristic7.0 VOLTS MAXIMUM POWER SOURCE
NSN5962-01-331-1070
COMPONENT DIAGRAM
COMPONENT MAIN IC EDGE CONNECTOR No detailed specs available MICROCIRCUIT,MEMORY TITLE COMPONENT PN MD27C010-150V10/B MFR MICROCIRCUIT,MEMORY
KEY FEATURES
•
INPUT CIRCUIT PATTERN: 19 INPUT
•
INCLOSURE MATERIAL: CERAMIC
•
TERMINAL SURFACE TREATMENT: SOLDER
•
FEATURES PROVIDED: ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND HIGH PERFORMANCE AND W/DISABLE AND W/ENABLE
•
INCLOSURE CONFIGURATION: DUAL-IN-LINE
•
MEMORY DEVICE TYPE: ROM
•
STORAGE TEMP RANGE: -65.0 TO 125.0 CELSIUS DEGC
•
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TYPICAL APPLICATIONS
  • Server memory expansion for virtualization workloads
  • Database performance optimization (in-memory computing)
  • VDI and remote desktop session hosting
  • High-performance computing (HPC) clusters
  • Mail server and collaboration platform scaling
  • Application server tier expansion
TECHNICAL CHARACTERISTICS
INPUT CIRCUIT PATTERN19 INPUT
INCLOSURE MATERIALCERAMIC
TERMINAL SURFACE TREATMENTSOLDER
FEATURES PROVIDEDULTRAVIOLET ERASABLE AND PROGRAMMABLE AND HIGH PERFORMANCE AND W/DISABLE AND W/ENABLE
INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY DEVICE TYPEROM
STORAGE TEMP RANGE-65.0 TO 125.0 CELSIUS DEGC
OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
VOLTAGE RATING AND TYPE PER CHARACTERISTIC7.0 VOLTS MAXIMUM POWER SOURCE
OPERATING TEMP RANGE-55.0 TO 125.0 CELSIUS DEGC
SUBSTITUTES & CROSS-REFERENCES 1
ROM/PROMReference document
Same NSN cross-reference
Reference document — Secondary reference
LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Insurance item — stocked against contingency demandDemilitarization required — mutilation
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FREQUENTLY ASKED QUESTIONS
What is MD27C010-150V10/B?
MD27C010-150V10/B is a MICROCIRCUIT,MEMORY.
What parts can replace MD27C010-150V10/B?
There is 1 known substitute for MD27C010-150V10/B: ROM/PROM. Substitute compatibility should be verified for your specific system.
What is the NSN for MD27C010-150V10/B?
MD27C010-150V10/B is cataloged in the U.S. Government catalog under NSN 5962-01-331-1070. This indicates validated use in U.S. government and defense supply chains.
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