MCR649AP3: SEMICONDUCTOR DEVICE,THYRISTOR.
The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_width: 1.050 INCHES MAXIMUM IN, overall_height: 0.450 INCHES MAXIMUM IN, overall_length: 1.573 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), overall_diameter: 0.875 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: PNPNP. This part is cataloged in the U.S.
Government catalog under NSN 5961-00-193-4571, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_width | 1.050 INCHES MAXIMUM IN |
| overall_height | 0.450 INCHES MAXIMUM IN |
| overall_length | 1.573 INCHES MAXIMUM IN |
| mounting_method | UNTHREADED HOLE(S) |
| overall_diameter | 0.875 INCHES MAXIMUM IN |
| special_features | JUNCTION PATTERN ARRANGEMENT: PNPNP |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 2 PIN AND 1 CASE |
| power_rating_per_characteristic | 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION |
| NSN | 5961-00-193-4571 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 2 |
| OVERALL DIAMETER | 0.875 INCHES MAXIMUM IN |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.450 INCHES MAXIMUM IN |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CURRENT RATING PER CHARACTERISTIC | 2.00 AMPERES MAXIMUM FORWARD GATE CURRENT |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
No substitute or cross-reference records for this part.