MCR3835-4 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

MCR3835-4: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.385 INCHES NOMINAL IN, mounting_method: TERMINAL, overall_diameter: 0.635 INCHES NOMINAL IN, features_provided: HERMETICALLY SEALED CASE, internal_configuration: JUNCTION CONTACT. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-488-9897, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

MCR3835-4

NSN: 5961-00-488-9897
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 5V1P1 — ON SEMICONDUCTOR CORPORATION (USA)

SPECIFICATIONS

material	GLASS ENCLOSURE
overall_length	0.385 INCHES NOMINAL IN
mounting_method	TERMINAL
overall_diameter	0.635 INCHES NOMINAL IN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
terminal_type_and_quantity	2 TAB, SOLDER LUG AND 1 CASE
power_rating_per_characteristic	5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
current_rating_per_characteristic	325.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
voltage_rating_in_volts_per_characteristic	200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
maximum_operating_temp_per_measurement_point	100.0 CELSIUS JUNCTION DEGC
NSN	5961-00-488-9897

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.635 INCHES NOMINAL IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	100.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.635 INCHES NOMINAL IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.385 INCHES NOMINAL IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	325.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
MATERIAL	GLASS ENCLOSURE

SUBSTITUTES & CROSS-REFERENCES 4

MCR2835-4Reference document

Same NSN cross-reference

Reference document — Secondary reference

725079Reference document

Same NSN cross-reference

Reference document — Secondary reference

MRC3835-1Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

70941132-001Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is MCR3835-4?

MCR3835-4 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace MCR3835-4?

There are 4 known substitutes for MCR3835-4: MCR2835-4, 725079, MRC3835-1 and 1 more. Substitute compatibility should be verified for your specific system.

What is the NSN for MCR3835-4?

MCR3835-4 is cataloged in the U.S. Government catalog under NSN 5961-00-488-9897. This indicates validated use in U.S. government and defense supply chains.

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MCR3835-4 — SEMICONDUCTOR DEVICE,THYRISTOR

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