The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_width: 0.305 INCHES MAXIMUM IN, overall_height: 0.105 INCHES MAXIMUM IN, overall_length: 0.435 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), special_features: JUNCTION PATTERN ARRANGEMENT: PNPN. This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-609-0464, indicating validated use in U.S.
government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.
| material | GLASS ENCLOSURE |
| overall_width | 0.305 INCHES MAXIMUM IN |
| overall_height | 0.105 INCHES MAXIMUM IN |
| overall_length | 0.435 INCHES MAXIMUM IN |
| mounting_method | UNTHREADED HOLE(S) |
| special_features | JUNCTION PATTERN ARRANGEMENT: PNPN |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 1 |
| terminal_type_and_quantity | 3 PIN |
| power_rating_per_characteristic | 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION |
| NSN | 5961-00-609-0464 |
| OVERALL LENGTH | 0.435 INCHES MAXIMUM IN |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| SEMICONDUCTOR MATERIAL | SILICON |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |
| OVERALL HEIGHT | 0.105 INCHES MAXIMUM IN |
| CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL |
| POWER RATING PER CHARACTERISTIC | 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |