MCM91000AS80 — MICROCIRCUIT,MEMORY

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

MCM91000AS80: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include features_provided: POSITIVE OUTPUTS AND MONOLITHIC AND DYNAMIC AND ELECTROSTATIC SENSITIVE, output_logic_form: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC, inclosure_material: CERAMIC, memory_device_type: RAM, storage_temp_range: -65.0 TO 150.0 CELSIUS DEGC, operating_temp_range: +0.0 TO 70.0 CELSIUS DEGC. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-360-4026, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

MCM91000AS80

NSN: 5962-01-360-4026
FSC: 5962 — Microcircuits, Electronic
CAGE: 04713 — FREESCALE SEMICONDUCTOR, INC. (USA)

SPECIFICATIONS

features_provided	POSITIVE OUTPUTS AND MONOLITHIC AND DYNAMIC AND ELECTROSTATIC SENSITIVE
output_logic_form	COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
inclosure_material	CERAMIC
memory_device_type	RAM
storage_temp_range	-65.0 TO 150.0 CELSIUS DEGC
operating_temp_range	+0.0 TO 70.0 CELSIUS DEGC
inclosure_configuration	SINGLE-IN-LINE
terminal_surface_treatment	SOLDER
time_rating_per_chacteristic	80.00 NANOSECONDS MAXIMUM DELAY NS
maximum_power_dissipation_rating	1.575 MILLIWATTS
voltage_rating_and_type_per_characteristic	5.0 VOLTS NOMINAL POWER SOURCE
NSN	5962-01-360-4026

COMPONENT DIAGRAM

KEY FEATURES

•

INCLOSURE MATERIAL: CERAMIC

•

TERMINAL SURFACE TREATMENT: SOLDER

•

FEATURES PROVIDED: POSITIVE OUTPUTS AND MONOLITHIC AND DYNAMIC AND ELECTROSTATIC SENSITIVE

•

INCLOSURE CONFIGURATION: SINGLE-IN-LINE

•

MEMORY DEVICE TYPE: RAM

•

STORAGE TEMP RANGE: -65.0 TO 150.0 CELSIUS DEGC

•

OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC

•

VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE

TYPICAL APPLICATIONS

Server memory expansion for virtualization workloads
Database performance optimization (in-memory computing)
VDI and remote desktop session hosting
High-performance computing (HPC) clusters
Mail server and collaboration platform scaling
Application server tier expansion

TECHNICAL CHARACTERISTICS

INCLOSURE MATERIAL	CERAMIC
TERMINAL SURFACE TREATMENT	SOLDER
FEATURES PROVIDED	POSITIVE OUTPUTS AND MONOLITHIC AND DYNAMIC AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION	SINGLE-IN-LINE
MEMORY DEVICE TYPE	RAM
STORAGE TEMP RANGE	-65.0 TO 150.0 CELSIUS DEGC
OUTPUT LOGIC FORM	COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
VOLTAGE RATING AND TYPE PER CHARACTERISTIC	5.0 VOLTS NOMINAL POWER SOURCE
OPERATING TEMP RANGE	+0.0 TO 70.0 CELSIUS DEGC
TERMINAL TYPE AND QUANTITY	30 PRINTED CIRCUIT

OTHER ITEMS IN FSC 5962 — Microcircuits, Electronic

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5962-00-001-1861 5962-00-001-1901 5962-00-001-1902 5962-00-001-1905 5962-00-001-1906 5962-00-001-1907 5962-00-001-1908 5962-00-001-1909

SUBSTITUTES & CROSS-REFERENCES 2

MT9D19M-8Reference document

Same NSN cross-reference

Reference document — Secondary reference

MT3D19M-07Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — stock exhausted; no further procurementDemilitarization required — critical (Q)

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FREQUENTLY ASKED QUESTIONS

What is MCM91000AS80?

MCM91000AS80 is a MICROCIRCUIT,MEMORY.

What parts can replace MCM91000AS80?

There are 2 known substitutes for MCM91000AS80: MT9D19M-8, MT3D19M-07. Substitute compatibility should be verified for your specific system.

What is the NSN for MCM91000AS80?

MCM91000AS80 is cataloged in the U.S. Government catalog under NSN 5962-01-360-4026. This indicates validated use in U.S. government and defense supply chains.

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