The MICROCIRCUIT,DIGITAL is a the manufacturer industrial component. Key specifications include body_width: 0.150 INCHES MINIMUM AND 0.157 INCHES MAXIMUM IN, body_height: 0.045 INCHES MINIMUM AND 0.064 INCHES MAXIMUM IN, body_length: 0.337 INCHES MINIMUM AND 0.344 INCHES MAXIMUM IN, features_provided: ELECTROSTATIC SENSITIVE, output_logic_form: HI-PERFORMANCE MOS, inclosure_material: PLASTIC. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5962-01-387-7913, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| body_width | 0.150 INCHES MINIMUM AND 0.157 INCHES MAXIMUM IN |
| body_height | 0.045 INCHES MINIMUM AND 0.064 INCHES MAXIMUM IN |
| body_length | 0.337 INCHES MINIMUM AND 0.344 INCHES MAXIMUM IN |
| features_provided | ELECTROSTATIC SENSITIVE |
| output_logic_form | HI-PERFORMANCE MOS |
| inclosure_material | PLASTIC |
| storage_temp_range | -65.0 TO 150.0 CELSIUS DEGC |
| operating_temp_range | -55.0 TO 125.0 CELSIUS DEGC |
| input_circuit_pattern | HEX 1 INPUT |
| end_item_identification | C-17A AIRCRAFT A |
| inclosure_configuration | DUAL-IN-LINE |
| terminal_surface_treatment | SOLDER |
| NSN | 5962-01-387-7913 |
| TIME RATING PER CHACTERISTIC | 145.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 145.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT NS |
| TERMINAL TYPE AND QUANTITY | 14 GULLWING |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS DEGC |
| MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
| INPUT CIRCUIT PATTERN | HEX 6 INPUT |
| DESIGN FUNCTION AND QUANTITY | 6 INVERTER |
| BODY LENGTH | 0.337 INCHES MINIMUM AND 0.344 INCHES MAXIMUM IN |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| TERMINAL SURFACE TREATMENT | SOLDER |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |