The MICROCIRCUIT,DIGITAL is a the manufacturer industrial component. Key specifications include body_width: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM IN, body_height: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM IN, body_length: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN, features_provided: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED AND LOW POWER, output_logic_form: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC, inclosure_material: CERAMIC AND GLASS. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5962-00-200-1985, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| body_width | 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM IN |
| body_height | 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM IN |
| body_length | 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN |
| features_provided | MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED AND LOW POWER |
| output_logic_form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| inclosure_material | CERAMIC AND GLASS |
| storage_temp_range | -65.0 TO 150.0 CELSIUS DEGC |
| operating_temp_range | -55.0 TO 125.0 CELSIUS DEGC |
| input_circuit_pattern | DUAL 4 INPUT |
| inclosure_configuration | DUAL-IN-LINE |
| design_function_and_quantity | 2 GATE, NAND |
| maximum_power_dissipation_rating | 200.0 MILLIWATTS |
| NSN | 5962-00-200-1985 |
| INPUT CIRCUIT PATTERN | DUAL 4 INPUT |
| MAXIMUM POWER DISSIPATION RATING | 200.0 MILLIWATTS |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS DEGC |
| BODY LENGTH | 0.745 INCHES MINIMUM AND 0.770 INCHES MAXIMUM IN |
| BODY WIDTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN |
| INCLOSURE MATERIAL | PLASTIC |
| DESIGN FUNCTION AND QUANTITY | 2 GATE, NAND |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| FEATURES PROVIDED | MONOLITHIC AND MEDIUM SPEED AND POSITIVE OUTPUTS AND LOW IMPEDANCE |
| BODY HEIGHT | 0.180 INCHES MAXIMUM IN |