MBRS3200T3G — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

MBRS3200T3G: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.130 INCHES MINIMUM AND 0.150 INCHES MAXIMUM IN, overall_height: 0.075 INCHES MINIMUM AND 0.095 INCHES MAXIMUM IN, overall_length: 0.205 INCHES MINIMUM AND 0.220 INCHES MAXIMUM IN, current_rating_per_characteristic: 3.0 MILLIAMPERES NOMINAL FORWARD CURRENT, AVERAGE, voltage_rating_in_volts_per_characteristic: 200.0 NOMINAL REVERSE VOLTAGE, PEAK. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-601-3889, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

MBRS3200T3G

NSN: 5961-01-601-3889
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 1MQ07 — SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC DBA SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DIV CORPORATE HEADQUARTERS (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_width	0.130 INCHES MINIMUM AND 0.150 INCHES MAXIMUM IN
overall_height	0.075 INCHES MINIMUM AND 0.095 INCHES MAXIMUM IN
overall_length	0.205 INCHES MINIMUM AND 0.220 INCHES MAXIMUM IN
current_rating_per_characteristic	3.0 MILLIAMPERES NOMINAL FORWARD CURRENT, AVERAGE
voltage_rating_in_volts_per_characteristic	200.0 NOMINAL REVERSE VOLTAGE, PEAK
maximum_operating_temp_per_measurement_point	150.0 CELSIUS JUNCTION DEGC
NSN	5961-01-601-3889

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REVERSE VOLTAGE, PEAK

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

CURRENT RATING PER CHARACTERISTIC: 3.0 MILLIAMPERES NOMINAL FORWARD CURRENT, AVERAGE

•

MATERIAL: PLASTIC ENCLOSURE

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.075 INCHES MINIMUM AND 0.095 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	200.0 NOMINAL REVERSE VOLTAGE, PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
OVERALL LENGTH	0.205 INCHES MINIMUM AND 0.220 INCHES MAXIMUM IN
OVERALL WIDTH	0.130 INCHES MINIMUM AND 0.150 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	3.0 MILLIAMPERES NOMINAL FORWARD CURRENT, AVERAGE
MATERIAL	PLASTIC ENCLOSURE

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 1

91855855Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is MBRS3200T3G?

MBRS3200T3G is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace MBRS3200T3G?

There is 1 known substitute for MBRS3200T3G: 91855855. Substitute compatibility should be verified for your specific system.

What is the NSN for MBRS3200T3G?

MBRS3200T3G is cataloged in the U.S. Government catalog under NSN 5961-01-601-3889. This indicates validated use in U.S. government and defense supply chains.

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MBRS3200T3G — SEMICONDUCTOR DEVICE,DIODE

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